? 2003 ixys all rights reserved g = gate c = collector e = emitter tab = collector symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c40a i c110 t c = 110 c20a i cm t c = 25 c, 1 ms 100 a ssoa v ge = 15 v, t j = 125 c, r g = 10 ? i cm = 40 a (rbsoa) clamped inductive load @0.8 v ces p c t c = 25 c 190 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (m3.5 screw) 0.55/5 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature 260 c soldering smd devices for 10s weight 4 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces 20n120b 50 a v ge = 0 v 20n120bd1 150 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 20a , v ge = 15 v 2.9 3.4 v note 2 t j =125 c 2.8 v features z international standard package z igbt and anti-parallel fred for resonant power supplies - induction heating - rice cookers z mos gate turn-on - drive simplicity z fast recovery expitaxial diode (fred) - soft recovery with low i rm advantages z saves space (two devices in one package) z easy to mount with 1 screw z reduces assembly time and cost ds99138(12/03) high voltage igbt with diode ixgp 20n120b ixgp 20n120bd1 v ces = 1200 v i c25 =40a v ce(sat) = 3.4 v t fi(typ) = 160 ns preliminary data sheet d1 to-220 (i xgp ) g c e c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixgp 20n120b ixgp 20n120bd1 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 20a; v ce = 10 v, 12 18 s note 2. c ies 1700 pf 20n120b 95 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 20n120bd1 105 pf c res 39 pf q g 72 nc q ge i c = 20a, v ge = 15 v, v ce = 0.5 v ces 12 nc q gc 27 nc t d(on) 25 ns t ri 15 ns t d(off) 150 280 ns t fi 160 320 ns e off 2.1 3.5 mj t d(on) 25 ns t ri 18 ns e on 1.4 mj t d(off) 270 ns t fi 360 ns e off 3.5 mj r thjc 0.65 k/w r thck 0.25 k/w reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 10 a, v ge = 0 v 3.3 v i f t c = 90 c10a i rm i f = 10 a; -di f /dt = 400 a/ s, v r = 600 v 14 a t rr v ge = 0 v; t j = 125 c 120 ns t rr i f = 1 a; -di f /dt = 100 a/ s; v r = 30 v, v ge = 0 v 40 n s r thjc 2.5 k/w inductive load, t j = 125 c i c = 20a; v ge = 15 v v ce = 0.8 v ces ; r g = r off = 10 ? note 1 inductive load, t j = 25 c i c = 20 a; v ge = 15 v v ce = 0.8 v ces ; r g = r off = 10 ? note 1. notes: 1. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g . 2. pulse test, t 300 s, duty cycle d 2 % pins: 1 - gate 2 - collector 3 - emitter 4 - collector to-220 outline
? 2003 ixys all rights reserved ixgp 20n120b ixgp 20n120bd1 fig. 2. extended output characteristics @ 25 deg. c 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12141618 20 v c e - volts i c - amperes v ge = 15v 5v 7v 9v 11v 13v fig. 3. output characteristics @ 125 deg. c 0 5 10 15 20 25 30 35 40 0.511.522.533.544.5 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 1. output characteristics @ 25 deg. c 0 5 10 15 20 25 30 35 40 0.511.522.533.544.5 v c e - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 4. dependence of v ce(sat) on temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (s at) - normalize d i c = 20a i c = 10a v ge = 15v i c = 40a fig. 5. collector-to-em itter voltage vs. gate-to-em iiter voltage 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 6 7 8 9 10 11 12 13 14 15 16 17 v g e - volts v c e - volts t j = 25oc i c = 40a 20a 10a fig. 6. input adm ittance 0 10 20 30 40 50 60 45 6789 v g e - volts i c - amperes t j = 125oc 25oc -40oc
ixys reserves the right to change limits, test conditions, and dimensions. ixgp 20n120b ixgp 20n120bd1 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 fig. 7. transconductance 0 3 6 9 12 15 18 21 24 0 102030405060 i c - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 8. dependence of turn-off energy loss on r g 0 2 4 6 8 10 12 14 16 10 30 50 70 90 110 130 150 r g - ohms e off - millijoules i c = 10a t j = 125oc v ge = 15v v ce = 960v i c = 20a i c = 40a fig. 9. dependence of turn-off energy loss on i c 0 2 4 6 8 10 12 14 10 15 20 25 30 35 40 i c - amperes e off - millijoules r g = 10 ? r g = 100 ? - - - v ge = 15v v ce = 960v t j = 125oc t j = 125oc t j = 25oc fig. 10. dependence of turn-off energy loss on temperature 0 2 4 6 8 10 12 14 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules i c = 40a r g = 10 ? r g = 100 ? - - - v ge = 15v v ce = 960v i c = 20a i c = 10a fig. 11. dependence of turn-off sw itching tim e on r g 200 400 600 800 1000 1200 1400 10 30 50 70 90 110 130 150 r g - ohms switching time - nanoseconds i c = 10a t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 960v i c = 20a i c = 40a fig. 12. dependence of turn-off sw itching tim e on i c 200 250 300 350 400 450 500 550 10 15 20 25 30 35 40 i c - amperes switching time - nanoseconds t d(off) t fi - - - - - - r g = 10 ? v ge = 15v v ce = 960v t j = 125oc t j = 25oc
? 2003 ixys all rights reserved ixgp 20n120b ixgp 20n120bd1 200 600 1000 0 400 800 70 80 90 100 110 120 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.0 0.3 0.6 0.9 1.2 v fr di f /dt v 200 600 1000 0 400 800 0 10 20 30 40 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s dsep 8-06a/dsec16-06a i f = 20a i f = 10a i f = 5a t vj = 100c v r = 300v t vj = 100c i f = 10a fig. 15. peak reverse current i rm versus -di f /dt fig. 14. reverse recovery charge q r versus -di f /dt fig. 13. forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 20a i f = 10a i f = 5a q r i rm fig. 16. dynamic parameters q r , i rm versus t vj fig. 17. recovery time t rr versus -di f /dt fig. 18 peak forward voltage v fr and t f versus di f /dt i f = 20a i f = 10a i f = 5a t fr v fr fig. 19. transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 1.449 0.0052 2 0.5578 0.0003 3 0.4931 0.0169 914 t vj =150c t vj =100c t vj = 25c note: fig. 2 to fig. 6 shows typical values
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